Samsung Electronics today revealed it launched mass production of a 1-terabit (Tb) triple-level cell (TLC) eighth-generation Vertical NAND (V-NAND) with the highest bit density in the industry.
According to Samsung Electronics, the new V-NAND also has the greatest storage capacity to date, at 1Tb, allowing for more storage space in next-generation enterprise server systems around the world.
Samsung Electronics Executive Vice President of Flash Product & Technology SungHoi Hur added that as the market demands denser, higher-capacity storage, Samsung has used its sophisticated 3D scaling technology to reduce surface area and height while avoiding the cell-to-cell interference that generally happens when scaling down.
“Our eighth-generation V-NAND will help meet rapidly growing market demand and better position us to deliver more differentiated products and solutions, which will be at the very foundation of future storage innovations,” Samsung Electronics Executive Vice President of Flash Product & Technology SungHoi Hur stated.
By dramatically increasing bit productivity per wafer, Samsung was able to achieve the industry’s highest bit density. Based on the latest NAND flash standard, the Toggle DDR 5.0 interface, Samsung’s eighth-generation V-NAND has an input and output (I/O) throughput of up to 2.4 gigabits per second (Gbps), a 1.2X increase over the previous generation. This will let the new V-NAND to meet PCIe 4.0 and, subsequently, PCIe 5.0 performance requirements.
The eighth-generation V-NAND is projected to be the foundation for storage solutions that help improve storage capacity in next-generation enterprise servers, while also finding use in the automotive market, where dependability is key.
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